A Numerical Investigation on the Combined Effects of MoSe2 Interface Layer and Graded Bandgap Absorber in CIGS Thin Film Solar Cells
نویسندگان
چکیده
The influence of Molybdenum diselenide (MoSe2) as an interfacial layer between Cu(In,Ga)Se2 (CIGS) absorber and (Mo) back contact in a conventional CIGS thin-film solar cell was investigated numerically using SCAPS-1D (a Solar Cell Capacitance Simulator). Using graded bandgap profile the that consist both grading (BG) front (FG), which is defined double (DG), attribution to variation Ga content studied. key focus this study explore combinatorial effects MoSe2 suppress carrier losses due recombination resistance usually occur case standard Mo thin films. Thickness, energy, electron affinity concentration were all varied determine best configuration for incorporating into structure. A offers optimum functionality proposed with additional has also been investigated. From overall results, cells high acceptor doping have found outperform devices without layer, increase efficiency from 20.19% 23.30%. introduction interfaces further improves open-circuit voltage (VOC) short-circuit current density (JSC), most likely quasi-electric field beneficial collection reduced surface bulk recombination. maximum power conversion (PCE) 28.06%, fill factor (FF) 81.89%, JSC 39.45 mA/cm2, VOC 0.868 V achieved by optimizing properties layer. This provides insight different possibilities designing higher structure through manipulation naturally formed engineering can be experimentally replicated.
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ژورنال
عنوان ژورنال: Coatings
سال: 2021
ISSN: ['2079-6412']
DOI: https://doi.org/10.3390/coatings11080930